Search results for "Single Event Upsets"

showing 4 items of 4 documents

The TileCal Optical Multiplexer Board 9U

2011

Abstract TileCal is the hadronic calorimeter of the ATLAS experiment at LHC/CERN. The system contains roughly 10,000 channels of read-out electronics, whose signals are gathered and digitized in the front-end electronics and then transmitted to the counting room through two redundant optical links. Then, the data is received in the back-end system by the Optical Multiplexer Board (OMB) 9U which performs a CRC check to the redundant data to avoid Single Event Upsets errors. A real-time decision is taken on the event-to-event basis to transmit single data to the Read-Out Drivers (RODs) for processing. Due to the low dose level expected during the first years of operations in ATLAS it was deci…

CalorimeterLarge Hadron Colliderbusiness.industryComputer scienceDetectorATLAS experimentPhysics and Astronomy(all)ATLASMultiplexerCRCData acquisitionSoftwareCyclic redundancy checkLHCElectronicsDetectors and Experimental TechniquesbusinessSingle Event UpsetsFPGAComputer hardwarePhysics Procedia
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Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment

2021

This study investigates the response of synchronous dynamic random access memories to energetic electrons and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with different node sizes (63, 72, and 110 nm) were tested. Electrons with energies between 6 and 200 MeV were used at RADiation Effects Facility (RADEF) in Jyvaskyla, Finland, and at Very energetic Electron facility for Space Planetary Exploration missions in harsh Radiative environments (VESPER) in The European Organization for Nuclear Research (CERN), Switzerland. Photon irradiation was also performed in Jyvaskyla. In these irradiation tests, stuck bits originating from electro…

Nuclear and High Energy Physics[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicskäyttömuistitHardware_PERFORMANCEANDRELIABILITYElectronRadiationelektronit01 natural sciencesJovianelektroniikkakomponentitElectron radiationJupiterelectron radiation0103 physical sciencesRadiative transfer[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsElectrical and Electronic EngineeringavaruustekniikkaPhysicsHardware_MEMORYSTRUCTURESLarge Hadron Collider010308 nuclear & particles physicsionisoiva säteilystuck bits[SPI.TRON] Engineering Sciences [physics]/Electronics[INFO.INFO-ES] Computer Science [cs]/Embedded Systemstotal ionizing dose[SPI.TRON]Engineering Sciences [physics]/ElectronicsComputational physicssäteilyfysiikkaNuclear Energy and Engineeringradiation effectssingle event upsets[INFO.INFO-ES]Computer Science [cs]/Embedded SystemsNode (circuits)Random accessIEEE Transactions on Nuclear Science
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Proton Direct Ionization Upsets at Tens of MeV

2023

Experimental monoenergetic proton single-event upset (SEU) cross sections of a 65-nm low core-voltage static random access memory (SRAM) were found to be exceptionally high not only at low energies ($ 3 MeV and extending up to tens of MeV. The SEU cross Section from 20-MeV protons exceeds the 200-MeV proton SEU cross Section by almost a factor of 3. Similarly, monoenergetic neutron cross sections at 14 MeV are about a factor of 3 lower than the 20-MeV proton cross section. Because of Monte Carlo (MC) simulations, it was determined that this strong enhancement is due to the proton direct ionization process as opposed to the elastic and inelastic scattering processes that dominate the SEU res…

Nuclear and High Energy Physicsprotonitprotonsionitionisoiva säteilyscatteringneutronsenergiansiirtoMonte-Carlo simulationsneutronitmuistit (tietotekniikka)proton direct ionizationMonte Carlo -menetelmätNuclear Energy and Engineeringrandom access memorytrajectorydelta-raysNuclear Physics - Experimentsingle event upsetsElectrical and Electronic Engineeringliike-energia
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The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment

2020

International audience; The pion resonance in the nuclear reaction cross section is seen to have a direct impact on the single-event effect (SEE) cross section of modern electronic devices. This was experimentally observed for single-event upsets and single-event latchup. Rectangular parallelepiped (RPP) models built to fit proton data confirm the existence of the pion SEE cross-section resonance. The impact on current radiation hardness assurance (RHA) soft error rate (SER) predictions is, however, minimal for the accelerator environment since this is dominated by high neutron fluxes. The resonance is not seen to have a major impact on the high-energy hadron equivalence approximation estab…

Nuclear reactionProtonNuclear Theoryresonance: effectSingle event upsets01 natural sciences7. Clean energyResonance (particle physics)nuclear reactionelektroniikkakomponentitradiation hardness assurance (RHA)Detectors and Experimental TechniquesNuclear Experimentradiation: damagePhysicsLarge Hadron Colliderprotonscross sectionMesonsneutronitRandom access memorySEELarge Hadron Colliderpionsn: fluxNuclear and High Energy PhysicsprotonitMesonaccelerator[PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph]RHAsoft error ratesoft error rate (SER)hiukkaskiihdyttimetNuclear physicsFLUKACross section (physics)hiukkasetPion0103 physical sciencesNeutron[PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]Electrical and Electronic Engineeringpi: interactionsingle-event effect (SEE)Neutrons010308 nuclear & particles physicsneutronsAccelerators and Storage RingsParticle beamsNuclear Energy and EngineeringsäteilyfysiikkahadronIEEE Transactions on Nuclear Science
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